MC68HC912BD32 Datasheet, PDF (266/292 Pages) Freescale Semiconductor, Inc – Advance Information

Freescale Semiconductor, Inc.
Preliminary Electrical Characteristics
Table 74 Flash EEPROM Characteristics
V_DD = 5.0 Vdc ±5%, V_SS = 0 Vdc, T_A = T_L to T_H, unless otherwise noted
Characteristic
Symbol Min Typical Max
Units
Program/erase supply voltage:
Read only
Program / erase / verify⁽¹⁾
V_FP
V_DD−0.5
11.4
V_DD
12.0
V_DD+0.
5
12.6
V
V
Program/erase supply current
Word program
Erase
(V_FP = 12V)
(V_FP = 12V)
Number of programming pulses
Programming pulse
Program to verify time
Program margin
Number of erase pulses
Erase pulse
Erase to verify time
Erase margin
Program/erase endurance
I_FP
n_PP
t_PPULSE
t_VPROG
p_m
n_EP
t_EPULSE
t_VERASE
e_m
20
10
100⁽²⁾
5
1
100⁽²⁾
100
30
mA
4
mA
50 pulses
25
µs
µs
%
5 pulses
10
ms
ms
%
cycles
Data retention
10
years
1. Refer to errata for problem description and suggested workaround.
2. The number of margin pulses required is the same as the number of pulses used to program or erase.
MC68HC912BD32 Rev 1.0
Preliminary Electrical Characteristics
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