MC9S12GRMV1 Datasheet, PDF (1193/1292 Pages) Freescale Semiconductor, Inc – MC9S12G Family Reference Manual and Data Sheet

Electrical Characteristics
Table A-2. ESD and Latch-up Test Conditions
Model
Human Body
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
positive
negative
Symbol
Value
Unit
R1
1500
Ω
C
100
pF
-
-
3
3
Num
1
2
3
Table A-3. ESD and Latch-Up Protection Characteristics
C
Rating
C Human Body Model (HBM)
C Charge Device Model (CDM)
C Charge Device Model (CDM) (Corner Pins)
Symbol
V_HBM
V_CDM
V_CDM
Min
2000
500
750
Max
Unit
-
V
-
V
-
V
A.1.7 Operating Conditions
This section describes the operating conditions of the device. Unless otherwise noted those conditions
apply to all the following data.
NOTE
Please refer to the temperature rating of the device (C, V, M, W) with
regards to the ambient temperature T_A and the junction temperature T_J. For
power dissipation calculations refer to Section A.1.8, “Power Dissipation
and Thermal Characteristics”.
Table A-4. Operating Conditions
Rating
I/O, regulator and analog supply voltage
Oscillator
Bus frequency
Temperature Option C
Operating ambient temperature range¹
Operating junction temperature range
Temperature Option V
Operating ambient temperature range¹
Operating junction temperature range
Temperature Option M
Operating ambient temperature range¹
Operating junction temperature range
Temperature Option W
Operating ambient temperature range¹
Operating junction temperature range
Symbol
Min
Typ
Max
Unit
V_DD35
3.13
5
5.5
V
f_osc
4
—
16
MHz
f_bus
0.5
—
25
MHz
°C
TA
–40
27
85
T_J
–40
—
105
°C
TA
–40
27
105
T_J
–40
—
105
°C
TA
–40
27
125
T_J
–40
—
150
°C
TA
–40
27
150
T_J
–40
—
160
MC9S12G Family Reference Manual, Rev.1.23
Freescale Semiconductor
1195