S912XEG384J3VA Datasheet, PDF (870/1324 Pages) Freescale Semiconductor, Inc – MC9S12XEP100 Reference Manual Covers MC9S12XE Family

Chapter 24 128 KByte Flash Module (S12XFTM128K2V1)
1. As defined by the memory map for FTM256K2.
2. As found in the memory map for FTM256K2.
24.4.2.4 Read Once Command
The Read Once command provides read access to a reserved 64 byte field (8 phrases) located in the
nonvolatile information register of P-Flash block 0. The Read Once field is programmed using the
Program Once command described in Section 24.4.2.6. The Read Once command must not be executed
from the Flash block containing the Program Once reserved field to avoid code runaway.
Table 24-39. Read Once Command FCCOB Requirements
CCOBIX[2:0]
000
001
010
011
100
101
FCCOB Parameters
0x04
Not Required
Read Once phrase index (0x0000 - 0x0007)
Read Once word 0 value
Read Once word 1 value
Read Once word 2 value
Read Once word 3 value
Upon clearing CCIF to launch the Read Once command, a Read Once phrase is fetched and stored in the
FCCOB indexed register. The CCIF flag will set after the Read Once operation has completed. Valid
phrase index values for the Read Once command range from 0x0000 to 0x0007. During execution of the
Read Once command, any attempt to read addresses within P-Flash block 0 will return invalid data.
128
Table 24-40. Read Once Command Error Handling
Register
FSTAT
FERSTAT
Error Bit
ACCERR
FPVIOL
MGSTAT1
MGSTAT0
EPVIOLIF
Error Condition
Set if CCOBIX[2:0] != 001 at command launch
Set if command not available in current mode (see Table 24-30)
Set if an invalid phrase index is supplied
None
Set if any errors have been encountered during the read
Set if any non-correctable errors have been encountered during the read
None
24.4.2.5 Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
MC9S12XE-Family Reference Manual Rev. 1.25
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