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S912XEG384J3VA Datasheet, PDF (1226/1324 Pages) Freescale Semiconductor, Inc – MC9S12XEP100 Reference Manual Covers MC9S12XE Family
Appendix A Electrical Characteristics
A.3.1.9 Erase P-Flash Block (FCMD=0x09)
Erasing a 256K NVM block takes
tmass ≈ 100100 ⋅ f--N-----V----M1------O-----P-- + 70000 ⋅ f--N-----V----M---1---B----U-----S--
Erasing a 128K NVM block takes
tmass ≈ 100100 ⋅ f--N-----V----M1------O-----P-- + 35000 ⋅ f--N-----V----M---1---B----U-----S--
A.3.1.10 Erase P-Flash Sector (FCMD=0x0A)
The typical time to erase a1024-byte P-Flash sector can be calculated using
tera
=
⎛
⎝
20020
⋅
f--N----V---1M----O----P- ⎠⎞
+ ⎝⎛700 ⋅ f--N----V---M-1---B---U----S-⎠⎞
The maximum time to erase a1024-byte P-Flash sector can be calculated using
tera
=
⎛
⎝
20020
⋅
f--N----V---1M----O----P- ⎠⎞
+
⎛
⎝
1100
⋅
f--N----V---M-1---B---U----S- ⎠⎞
A.3.1.11 Unsecure Flash (FCMD=0x0B)
The maximum time for unsecuring the flash is given by
tuns=
⎛
⎝
100100
⋅
f--N-----V----M-1-----O-----P--
+ 70000 ⋅
f--N-----V----M---1---B----U-----S--⎠⎞
A.3.1.12 Verify Backdoor Access Key (FCMD=0x0C)
The maximum verify backdoor access key time is given by
t= 400 ⋅ f--N-----V----M---1---B----U-----S--
A.3.1.13 Set User Margin Level (FCMD=0x0D)
The maximum set user margin level time is given by
t= 350 ⋅ f--N-----V----M---1---B----U-----S--
A.3.1.14 Set Field Margin Level (FCMD=0x0E)
The maximum set field margin level time is given by
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MC9S12XE-Family Reference Manual Rev. 1.25
Freescale Semiconductor