S912XEG384J3VA Datasheet, PDF (1118/1324 Pages) Freescale Semiconductor, Inc – MC9S12XEP100 Reference Manual Covers MC9S12XE Family

Chapter 28 768 KByte Flash Module (S12XFTM768K4V2)
Table 28-42. Load Data Field Command Error Handling
Register
Error Bit
Error Condition
Set if CCOBIX[2:0] != 101 at command launch
Set if command not available in current mode (see Table 28-30)
Set if an invalid global address [22:0] is supplied⁽¹⁾
FSTAT
ACCERR
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if a Load Data Field command sequence is currently active and the selected
block has previously been selected in the same command sequence
Set if a Load Data Field command sequence is currently active and global
address [17:0] does not match that previously supplied in the same command
sequence
FPVIOL Set if the global address [22:0] points to a protected area
MGSTAT1 None
MGSTAT0 None
FERSTAT
EPVIOLIF None
1. As defined by the memory map for FTM1024K5.
28.4.2.6 Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
CAUTION
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
Table 28-43. Program P-Flash Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x06
Global address [22:16] to
identify P-Flash block
001
Global address [15:0] of phrase location to be programmed⁽¹⁾
010
Word 0 program value
011
Word 1 program value
100
Word 2 program value
101
Word 3 program value
1. Global address [2:0] must be 000
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF flag will set after the Program P-Flash operation has completed.
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