S912XEG384J3VA Datasheet, PDF (1227/1324 Pages) Freescale Semiconductor, Inc – MC9S12XEP100 Reference Manual Covers MC9S12XE Family

Appendix A Electrical Characteristics
t= 350 ⋅ _{f--N-----V----M---1---B----U-----S--}
A.3.1.15 Full Partition D-Flash (FCMD=0x0F)
The maximum time for partitioning the D-flash (ERPART=16, DFPART=0) is given by :
tpart ≈ 21800 ⋅ _{f--N-----V----M-1-----O-----P--} + 400000 ⋅ _{f--N-----V----M---1---B----U-----S--} + tmass
A.3.1.16 Erase Verify D-Flash Section (FCMD=0x10)
Erase Verify D-Flash for a given number of words N_W is given by .
tcheck ≈ (840 + NW) ⋅ _{f--N-----V----M---1---B----U-----S--}
A.3.1.17 D-Flash Programming (FCMD=0x11)
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The D-
Flash programming time is specified for different cases (1,2,3,4 words and 4 words across a row boundary)
at a 50MHz bus frequency. The typical programming time can be calculated using the following equation,
whereby N_w denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a boundary is
crossed.
t_dpgm
=
⎛
⎝
(
15
+
(
54
⋅
N_w
)
+
(
16
⋅
BC
)
)
⋅
-f-_N----_V---1_M----_O----_P- _⎠⎞
+
⎛
⎝
(
460
+
(
640
⋅
N_W
)
+
(
500
⋅
BC
)
)
⋅
f--_N^----_V^---_M^-1---_B^---_U^----_S^{- ⎠⎞}
The maximum programming time can be calculated using the following equation
t_dpgm
=
⎛
⎝
(
15
+
(
56
⋅
N_w
)
+
(
16
⋅
B
C
))
⋅
-f-_N----_V---1_M----_O----_P- _⎠⎞
+
⎛
⎝
(
460
+
( 840
⋅
N_W)
+
( 500
⋅
BC))
⋅
f--_N^----_V^---_M^-1---_B^---_U^----_S^{- ⎠⎞}
A.3.1.18 Erase D-Flash Sector (FCMD=0x12)
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
teradf ≈ 5025 ⋅ _{f--N-----V----M-1-----O-----P--} + 700 ⋅ _{f--N-----V----M---1---B----U-----S--}
Maximum D-Fash sector erase times can be calculated using the following equation.
teradf ≈ 20100 ⋅ _{f--N-----V----M-1-----O-----P--} + 3300 ⋅ _{f--N-----V----M---1---B----U-----S--}
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the flash is cycled.
Freescale Semiconductor
MC9S12XE-Family Reference Manual Rev. 1.25
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