HD6473847RHV Datasheet, PDF (465/546 Pages) Renesas Technology Corp – Renesas 8-Bit Single-Chip Microcomputer H8 Family / H8/300L Super Low Power Series

Section 17 Electrical Characteristics
Item
Test
Symbol Conditions Min
Values
Typ
Max Unit
Erase
Wait time after
x
SWE-bit setting^*1
1
—
—
μs
Wait time after
y
ESU-bit setting^*1
100
—
—
μs
Wait time after
z
E-bit setting^*1*6
10
—
100
ms
Wait time after
α
E-bit clear^*1
10
—
—
μs
Wait time after
β
ESU-bit clear^*1
10
—
—
μs
Wait time after
γ
EV-bit setting^*1
20
—
—
μs
Wait time after
ε
dummy write^*1
2
—
—
μs
Wait time after
η
EV-bit clear^*1
4
—
—
μs
Wait time after
θ
SWE-bit clear^*1
100
—
—
μs
Maximum erase N
count^*1*6*7
—
—
120
times
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P bit in FLMCR1
is set. It does not include the programming verification time.)
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does
not include the erase verification time.)
4. Maximum programming time (t_P (max))
t (max) = Wait time after P-bit setting (z) • maximum number of writes (N)
P
5. The maximum number of writes (N) should be set according to the actual set value of
z1, z2, and z3 to allow programming within the maximum programming time (t_P (max)).
The wait time after P-bit setting (z1 and z2) should be alternated according to the
number of writes (n) as follows:
1≤n≤6
z1 = 30 μs
7 ≤ n ≤ 1000 z2 = 200 μs
6. Maximum erase time (t_E (max))
t (max) = Wait time after E-bit setting (z) • maximum erase count (N)
E
7. The maximum number of erases (N) should be set according to the actual set value of z
to allow erasing within the maximum erase time (t_E (max)).
8. This minimum value guarantees all characteristics after reprogramming (the guaranteed
range is from 1 to the minimum value).
9. Reference value when the temperature is 25°C (normally reprogramming will be
performed by this count).
Rev. 7.00 Mar. 08, 2010 Page 433 of 510
REJ09B0024-0700