HD6473847RHV Datasheet, PDF (443/546 Pages) Renesas Technology Corp – Renesas 8-Bit Single-Chip Microcomputer H8 Family / H8/300L Super Low Power Series

Section 17 Electrical Characteristics
17.4.6 Flash Memory Characteristics
Table 17.13 Flash Memory Characteristics
Condition A:
AV_CC = 2.7 V to 3.6 V, V_SS = AV_SS = 0.0 V, V_CC = 2.7 V to 3.6 V (range of
operating voltage when reading), V_CC = 3.0 V to 3.6 V (range of operating
voltage when programming/erasing), T_a = –20°C to +75°C (range of operating
temperature when programming/erasing: product with regular specifications,
product with wide-range temperature specifications, bare die product)
Condition B:
AV_CC = 2.2 V to 3.6 V, V_SS = AV_SS = 0.0 V, V_CC = 2.2 V to 3.6 V (range of
operating voltage when reading), V_CC = 3.0 V to 3.6 V (range of operating
voltage when programming/erasing), T_a = –20°C to +50°C (range of operating
temperature when programming/erasing: product with regular specifications)
Item
Programming time^*1*2*4
Erase time^*1*3*5
Reprogramming count
Data retain period
Programming Wait time after
SWE-bit setting^*1
Wait time after
PSU-bit setting^*1
Wait time after
P-bit setting^*1*4
Wait time after
P-bit clear^*1
Wait time after
PSU-bit clear^*1
Wait time after
PV-bit setting^*1
Wait time after
dummy write^*1
Wait time after
PV-bit clear^*1
Test
Symbol Conditions
t
P
t_E
N
WEC
t_DRP
x
Values
Min Typ Max Unit
—
7
200 ms/
128 bytes
—
1000^*8
10^*10
100 1200
10000^*9 —
—
—
ms/
block
times
year
1
—
— μs
y
50
—
— μs
z1
1≤n≤6
28
30
32 μs
z2
7 ≤ n ≤ 1000 198 200 202 μs
z3
Additional 8
10
12 μs
programming
α
5
—
— μs
β
5
—
— μs
γ
4
—
— μs
ε
2
—
— μs
η
2
—
— μs
Rev. 7.00 Mar. 08, 2010 Page 411 of 510
REJ09B0024-0700