HD6473847RHV Datasheet, PDF (444/546 Pages) Renesas Technology Corp – Renesas 8-Bit Single-Chip Microcomputer H8 Family / H8/300L Super Low Power Series

Section 17 Electrical Characteristics
Item
Test
Symbol Conditions Min
Values
Typ Max Unit
Programming Wait time after
θ
SWE-bit clear^*1
100 —
— μs
Maximum
N
programming
count^*1*4*5
—
—
1000 times
Erase
Wait time after
x
SWE-bit setting^*1
1
—
— μs
Wait time after
y
ESU-bit setting^*1
100 —
— μs
Wait time after
z
E-bit setting^*1*6
10
—
100 ms
Wait time after
α
E-bit clear^*1
10
—
— μs
Wait time after
β
ESU-bit clear^*1
10
—
— μs
Wait time after
γ
EV-bit setting^*1
20
—
— μs
Wait time after
ε
dummy write^*1
2
—
— μs
Wait time after
η
EV-bit clear^*1
4
—
— μs
Wait time after
θ
SWE-bit clear^*1
100 —
— μs
Maximum erase N
count^*1*6*7
—
—
120 times
Notes:
1. Set the times according to the program/erase algorithms.
2. Programming time per 128 bytes (Shows the total period for which the P bit in FLMCR1 is set. It
does not include the programming verification time.)
3. Block erase time (Shows the total period for which the E bit in FLMCR1 is set. It does not include
the erase verification time.)
4. Maximum programming time (t_P (max))
t_P (max) = Wait time after P-bit setting (z) • maximum number of writes (N)
5. The maximum number of writes (N) should be set according to the actual set value of z1, z2, and
z3 to allow programming within the maximum programming time (t_P (max)).
The wait time after P-bit setting (z1 and z2) should be alternated according to the number of writes
(n) as follows:
1≤n≤6
z1 = 30 μs
7 ≤ n ≤ 1000 z2 = 200 μs
6. Maximum erase time (t_E (max))
t_E (max) = Wait time after E-bit setting (z) • maximum erase count (N)
7. The maximum number of erases (N) should be set according to the actual set value of z to allow
erasing within the maximum erase time (t_E (max)).
8. This minimum value guarantees all characteristics after reprogramming (the guaranteed range is
from 1 to the minimum value).
Rev. 7.00 Mar. 08, 2010 Page 412 of 510
REJ09B0024-0700