HD6473847RHV Datasheet, PDF (198/546 Pages) Renesas Technology Corp – Renesas 8-Bit Single-Chip Microcomputer H8 Family / H8/300L Super Low Power Series

Section 6 ROM
6.10.3 Memory Read Mode
After completion of auto-program/auto-erase/status read operations, a transition is made to the
command wait state. When reading memory contents, a transition to memory read mode must first
be made with a command write, after which the memory contents are read. Once memory read
mode has been entered, consecutive reads can be performed.
1. In memory read mode, command writes can be performed in the same way as in the command
wait state.
2. After powering on, memory read mode is entered.
3. Tables 6.12 to 6.14 show the AC characteristics.
Table 6.12 AC Characteristics in Transition to Memory Read Mode
(Conditions: V_CC = 3.3 V ±0.3 V, V_SS = 0 V, Ta = 25°C ±5°C)
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
WE rise time
WE fall time
Symbol
t_nxtc
t_ceh
t_ces
t_dh
t_ds
t_wep
t_r
t_f
Min
20
0
0
50
50
70
—
—
Max
—
—
—
—
—
—
30
30
Unit
µs
ns
ns
ns
ns
ns
ns
ns
Test Condition
Figure 6.13
Rev. 7.00 Mar. 08, 2010 Page 166 of 510
REJ09B0024-0700