HD6473847RHV Datasheet, PDF (464/546 Pages) Renesas Technology Corp – Renesas 8-Bit Single-Chip Microcomputer H8 Family / H8/300L Super Low Power Series

Section 17 Electrical Characteristics
17.6.6 Flash Memory Characteristics
Table 17.21 Flash Memory Characteristics
Condition A: AV_CC = 2.7 V to 5.5 V, V_SS = AV_SS = 0.0 V, V_CC = 2.7 V to 5.5 V (range of
operating voltage when reading), V_CC = 3.0 V to 5.5 V (range of operating voltage
when programming/erasing), T_a = –20°C to +75°C (range of operating temperature
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Item
Test
Symbol Conditions Min
Values
Typ
Max Unit
Programming time^*1*2*4
t_P
Erase time^*1*3*5
t_E
Reprogramming count
N_WEC
Data retain period
t_DRP
Programming Wait time after
x
SWE-bit setting^*1
—
—
1000^*8
10^*10
1
7
200
100
1200
10000^*9 —
—
—
—
—
ms/128 bytes
ms/block
times
year
μs
Wait time after
y
PSU-bit setting^*1
50
—
—
μs
Wait time after
z1
P-bit setting^*1*4
z2
1≤n≤6
28
30
32
μs
7 ≤ n ≤ 1000 198
200
202
μs
z3
Additional
8
10
12
μs
programming
Wait time after
α
P-bit clear^*1
5
—
—
μs
Wait time after
β
PSU-bit clear^*1
5
—
—
μs
Wait time after
γ
PV-bit setting^*1
4
—
—
μs
Wait time after
ε
dummy write^*1
2
—
—
μs
Wait time after
η
PV-bit clear^*1
2
—
—
μs
Wait time after
θ
SWE-bit clear^*1
100
—
—
μs
Maximum
N
programming
count^*1*4*5
—
—
1000 times
Rev. 7.00 Mar. 08, 2010 Page 432 of 510
REJ09B0024-0700