 English |
|
|
|
|
|
|
|
| HD64F2357VF13 Datasheet, PDF (795/1049 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents | |||
| |||
| ◁ |
22.7.5 D/A Conversion Characteristics
Table 22-42 lists the D/A conversion characteristics
Table 22-42 D/A Conversion Characteristics
Condition B: VCC = AVCC = 5.0 V ± 10%, Vref = 4.5 V to AVCC, VSS = AVSS = 0 V,
ø = 2 to 20 MHz, Ta = â20 to +75°C (regular specifications),
Ta = â40 to +85°C (wide-range specifications)
Condition C: VCC = AVCC = 3.0 V to 5.5 V, Vref = 3.0 V to AVCC,
VSS = AVSS = 0 V, ø = 2 to 13 MHz, Ta = â20 to +75°C (regular specifications),
Ta = â40 to +85°C (wide-range specifications)
Item
Resolution
Conversion time
Absolute accuracy
Condition B
Condition C
Min Typ Max Min Typ Max Unit Test Conditions
8
8
8
8
8
8
bit
â â 10 â â 10 µs 20-pF capacitive
load
â ±1.0 ±1.5 â ±2.0 ±3.0 LSB 2-M⦠resistive load
â â ±1.0 â â ±2.0 LSB 4-M⦠resistive load
22.7.6 Flash Memory Characteristics
Table 22-43 shows the flash memory characteristics.
Table 22-43 Flash Memory Characteristics (1)
Conditions:
VCC = 5.0 V ± 10%, AVCC = 5.0 V ± 10%, Vref = 4.5 V to AVCC, VSS = AVSS = 0V
Ta = 0 to +75°C (Programming/erasing operating temperature, regular specifications), Ta = 0 to + 85°C
(Programming/erasing operating temperature, wide-range specifications)
Item
Symbol Min Typ Max Unit
Test
Condition
Programming time*1*2*4
Erase time*1*3*5
Reprogramming count
Programming Wait time after SWE bit
setting*1
tP
tE
NWEC
x
â 10 200 ms/32 bytes
â 100 1200 ms/block
â â 100 Times
10 â â
µs
Wait time after PSU bit
y
setting*1
50 â â
µs
Wait time after P bit
setting*1*4
z
150 â 200 µs
Wait time after P bit clear*1 α
10 â â
µs
Wait time after PSU bit
β
clear*1
10 â â
µs
Wait time after PV bit
γ
setting*1
4 ââ
µs
Wait time after H'FF dummy ε
write*1
2 ââ
µs
Rev.6.00 Oct.28.2004 page 765 of 1016
REJ09B0138-0600H
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese