HD64F2357VF13 Datasheet, PDF (641/1049 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

19.13.6 Auto-Erase Mode
AC Characteristics
Table 19-25 AC Characteristics in Auto-Erase Mode
Conditions: V_CC = 5.0 V ±10%, V_SS = 0 V, T_a = 25°C ±5°C
Item
Symbol
Min
Command write cycle
t _nxtc
20
CE hold time
t _ceh
0
CE setup time
t _ces
0
Data hold time
t _dh
50
Data setup time
t _ds
50
Write pulse width
t _wep
70
Status polling start time
t _ests
1
Status polling access time
t _spa
—
Memory erase time
t _erase
100
WE rise time
t_r
—
WE fall time
t_f
—
Erase setup time
t _ens
100
Erase end setup time
t _enh
100
Max
Unit
—
µs
—
ns
—
ns
—
ns
—
ns
—
ns
—
ms
150
ns
40000
ms
30
ns
30
ns
—
ns
—
ns
FWE
t_ens
Address
t_ces
t_ceh
CE
OE
WE
I/O7
I/O6
Data
t_wep
t_f
t_r
t_ds
t_dh
t_nxtc
CL_in
H'20
t_enh
t_spa
t_ests
t_{erase (100 to 40000 ms)}
Erase end identification
signal
Erase normal end
confirmation signal
t_nxtc
DL_in
H'20
I/O0 to I/O5 = 0
Figure 19-30 Auto-Erase Mode Timing Waveforms
Notes on Use of Auto-Erase Mode
• Auto-erase mode supports only entire memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O₆. Alternatively, status read mode can also be used for this purpose
(I/O₇ status polling uses the auto-erase operation end identification pin).
Rev.6.00 Oct.28.2004 page 611 of 1016
REJ09B0138-0600H