M16C6NK Datasheet, PDF (278/404 Pages) Renesas Technology Corp – 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES

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M16C/6N Group (M16C/6NK, M16C/6NM)
21. Flash Memory Version
21. Flash Memory Version
Aside from the built-in flash memory, the flash memory version microcomputer has the same functions as the
masked ROM version.
In the flash memory version, the flash memory can perform in four rewrite mode: CPU rewrite mode, standard
serial I/O mode, parallel I/O mode and CAN I/O mode.
Table 21.1 lists the specifications of the flash memory version. See Tables 1.1 and 1.2 Performance
outline, for the items not listed in Table 21.1). Table 21.2 shows the outline of flash memory rewrite mode.
Table 21.1 Flash Memory Version Specifications
Item
Specifications
Flash Memory Operating Mode
4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)
Erase Block
Program Method
User ROM Area
Boot ROM Area
See Figure 21.1 Flash Memory Block Diagram
1 block (4 Kbytes) ⁽¹⁾
In units of word, in units of byte ⁽²⁾
Erase Method
Collective erase, block erase
Program and Erase Control Method Program and erase controlled by software command
Protect Method
Lock bit protects each block
Number of Commands
Program and Erase Endurance ⁽³⁾
8 commands
100 times
ROM Code Protection
Parallel I/O , standard serial I/O and CAN I/O modes are supported.
NOTES:
1. The boot ROM area contains a standard serial I/O mode and CAN I/O mode rewrite control program which is stored in
it when shipped from the factory. This area can only be rewritten in parallel I/O mode.
2. Can be programmed in byte units in only parallel I/O mode.
3. Definition of program and erase endurance
The programming and erasure times are defined to be per-block erasure times. For example, assume a case where a 4K-byte
block A is programmed in 2,048 operations by writing one word at a time and erased thereafter. In this case, the block is
reckoned as having been programmed and erased once.
If a product is 100 times of programming and erasure, each block in it can be erased up to 100 times.
Table 21.2 Flash Memory Rewrite Modes Overview
Flash Memory
Rewrite Mode
CPU Rewrite Mode ⁽¹⁾
Standard Serial I/O Mode
Parallel I/O Mode
CAN I/O Mode
Function
The user ROM area is The user ROM area is _{The boot ROM and user The user ROM area is}
rewritten when the CPU r e w r i t t e n u s i n g a _{ROM areas are rewritten rewritten busing a dedicated}
e x e c u t e s s o f t w a r e d e d i c a t e d s e r i a l _{using a dedicated parallel CAN programmer.}
commands.
EW0 mode:
programmer.
Standard serial I/O mode 1: ^programmer.
Rewrite in areas other Clock synchronous
than flash memory ⁽²⁾ serial I/O
EW1 mode:
Standard serial I/O mode 2:
Can be rewritten in the UART ⁽³⁾
flash memory
Areas which User ROM area
User ROM area
User ROM area
User ROM area
can be Rewritten
Boot ROM area
Operation
Single-chip mode
Boot mode
Parallel I/O mode
Boot mode
Mode
Memory expansion mode
(EW0 mode) ⁽⁴⁾
Boot mode (EW0 mode)
ROM Programmer None
Serial programmer Parallel programmer CAN programmer
NOTES:
1. The PM13 bit remains set to “1” while the FMR01 bit in the FMR0 register = 1 (CPU rewrite mode enabled). The PM13 bit
is reverted to its original value by setting the FMR01 bit to “0” (CPU rewrite mode disabled). However, if the PM13 bit is
changed during CPU rewrite mode, its changed value is not reflected until after the FMR01 bit is set to “0”.
2. When in CPU rewrite mode, the PM10 and PM13 bits in the PM1 register are set to “1”. The rewrite control program can
only be executed in the internal RAM or in an external area that is enabled for use when the PM13 bit = 1.
3. When using the standard serial I/O mode 2, make sure a main clock input oscillation frequency is set to 5 MHz, 10 MHz
or 16 MHz.
4. Not available in T/V-ver..
Rev.2.00 Nov 28, 2005 page 260 of 378
REJ09B0124-0200