MC912DG128ACPVE Datasheet, PDF (133/478 Pages) Freescale Semiconductor, Inc – Upward compatible with M68HC11 instruction set

Freescale Semiconductor, Inc.
EEPROM Memory
Program/Erase Operation
9.6 Program/Erase Operation
A program or erase operation should follow the sequence below if AUTO
bit is clear:
1. Write BYTE, ROW and ERASE to desired value, write EELAT = 1
2. Write a byte or an aligned word to an EEPROM address
3. Write EEPGM = 1
4. Wait for programming, t_PROG or erase, t_ERASE delay time
5. Write EEPGM = 0
6. Write EELAT = 0
If the AUTO bit is set, steps 4 and 5 can be replaced by a step to poll the
EEPGM bit until it is cleared.
CAUTION:
The state machine will not start if an attempt is made to program or erase
a protected location and therefore the EEPGM bit will never clear on that
EEPROM operation. Check for protected status or use a software
timeout to avoid a continuous loop whilst polling the EEPGM bit. If using
a timeout, ensure steps 5 and 6 are still executed.
It is possible to program/erase more bytes or words without intermediate
EEPROM reads, by jumping from step 5 to step 2.
MC68HC912DT128A — Rev 4.0
MOTOROLA
EEPROM Memory
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Go to: www.freescale.com
Technical Data
133