MC68HC11KW1 Datasheet, PDF (86/238 Pages) Motorola, Inc – High-density complementary metal oxide semiconductor HCMOS) microcontroller unit

This bit may be read or written at any time.
ROW — EEPROM row/bulk erase mode (only valid when BYTE = 0)
1 (set) – Erase only one 16 byte row of EEPROM.
0 (clear) – Erase all 640 bytes of EEPROM.
This byte can be read or written at any time.
4
Table 4-19 Erase mode selection
Byte Row
Action
0
0 Bulk erase (all 640 bytes)
0
1 Row erase (16 bytes)
1
0 Byte erase
1
1 Byte erase
ERASE — Erase/normal control for EEPROM
1 (set) – Erase mode.
0 (clear) – Normal read or program mode.
This byte can be read or written at any time.
EELAT — EEPROM latch control
1 (set) – EEPROM address and data bus set up for programming or erasing.
0 (clear) – EEPROM address and data bus set up for normal reads.
When the EELAT bit is cleared, the EEPROM can be read as if it were a ROM. The block protect
register has no effect during reads. This bit can be read and written at any time.
EEPGM — EEPROM program command
1 (set) – Program or erase voltage switched on to EEPROM array.
0 (clear) – Program or erase voltage switched off to EEPROM array.
This bit can be read at any time but can only be written if EELAT = 1.
Note: If EELAT = 0 (normal operation) then EEPGM = 0 (programming voltage disconnected).
During EEPROM programming, the ROW and BYTE bits of PPROG are not used. If the frequency
of the E clock is 1MHz or less, set the CSEL bit in the OPTION register. Remember that the
EEPROM must be erased by a separate erase operation before programming. The following
4-42
OPERATING MODES AND ON-CHIP MEMORY
MC68HC11KW1