MC68HC11KW1 Datasheet, PDF (222/238 Pages) Motorola, Inc – High-density complementary metal oxide semiconductor HCMOS) microcontroller unit

B
4X ^{0.20 (0.008) H L-M N}
100
1
–L–
3X VIEW Y
25
26
A1
S1
A
S
C
–H–
–T–
SEATING
PLANE
4X 25 TIPS
76
–N–
50
2X 02
2X 03
0.20 (0.008) T L-M N
75
–M–
BV
B1 V1
51
0.08 (0.003) T
VIEW AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM -H- IS LOCATED AT BOTTOM OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE BOTTOM
OF THE PARTING LINE.
4. DATUMS -L-, -M- AND -N- TO BE DETERMINED
AT DATUM -H-.
5. DIMENSIONS S AND V TO BE DETERMINED AT
SEATING PLANE -T-.
6. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 (0.100) PER SIDE. DIMENSIONS A AND B DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM -H-.
7. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. DAMBAR PROTRUSION SHALL
NOT CAUSE THE LEAD WIDTH TO EXCEED 0.350
(0.014). MINIMUM SPACE BETWEEN PROTRUSION
AND ADJACENT LEAD OR PROTRUSION 0.070
(0.003).
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 14.00 BSC
0.551 BSC
A1 7.00 BSC
0.276 BSC
B 14.00 BSC
0.551 BSC
B1 7.00 BSC
0.276 BSC
C
1.60
0.063
C1 0.05 0.15 0.002 0.006
C2 1.35 1.45 0.053 0.057
D 0.17 0.27 0.007 0.011
E 0.45 0.75 0.018 0.030
F 0.17 0.23 0.007 0.009
G
0.50 BSC
0.20 BSC
J 0.09 0.20 0.004 0.008
K
0.50 REF
0.020 REF
R1 0.10 0.20 0.004 0.008
S
16.00 BSC
0.630 BSC
S1
8.00 BSC
0.315 BSC
U 0.09 0.16 0.004 0.006
V
16.00 BSC
0.630 BSC
V1
8.00 BSC
0.315 BSC
W
0.20 REF
0.008 REF
Z
1.00 REF
0.039 REF
θ
0_ 7_ 0_ 7_
θ1
0_
0_
θ2
12 _
12 _
θ3
5_ 13_ 5_ 13_
0.05 (0.002) S
W
C2
C1
Z
VIEW AA
Θ1 ^{2XR R1}
0.25 (0.010)
CL
GAGE PLANE
K
E_Θ
AB
AB
VIEW Y
Case 983-01
G
–X–
X=L, M, N
BASE METAL
F
J
U
D
PLATING
0.08 (0.003) M T L-M S N S
SECTION AB–AB
ROTATED 90°CLOCKWISE
Figure B-2 100-pin TQFP mechanical dimensions
MECHANICAL DATA
MC68HC11KW1
B-2