S9S12XS256J0CAL Datasheet, PDF (680/738 Pages) Freescale Semiconductor, Inc – Microcontrollers

Electrical Characteristics
A.3.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by
t
=
( 400 )
⋅
----------¹----------
f _NVMBUS
A.3.1.5 Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words + associated eight ECC bits is dependant
on the bus frequency as a well as on the frequency f_NVMOP and can be calculated according to the
following formulas.
The typical phrase programming time can be calculated using the following equation
tbwpgm = 128 ⋅ _f---_N-----_V----^1M------_O-----_P-- + 1725 ⋅ _f---_N-----_V----_M--¹----_B----_U-----_S-
The maximum phrase programming time can be calculated using the following equation
tbwpgm = 130 ⋅ _f---_N-----_V----^1M------_O-----_P-- + 2125 ⋅ _f---_N-----_V----_M--¹----_B----_U-----_S-
A.3.1.6 P-Flash Program Once (FCMD=0x07)
The maximum P-Flash Program Once time is given by
t_bwpgm ≈ 162 ⋅ _{f--N-----V----M-1-----O-----P--} + 2400 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
A.3.1.7 Erase All Blocks (FCMD=0x08)
Erasing all blocks takes:
tmass ≈ 100100 ⋅ _{f--N-----V----M-1-----O-----P--} + 35000 ⋅ _f--N-----_V-----_M-1----_B----_U-----_S-
S12XS Family Reference Manual, Rev. 1.13
680
Freescale Semiconductor