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S912XEG128J2MAA Datasheet, PDF (1230/1324 Pages) Freescale Semiconductor, Inc – Microcontrollers
Appendix A Electrical Characteristics
A.3.1.24 EEE Copy Down
The typical EEE copy down time is given by the following equation
tdfcd = (14000 + (316 ⋅ ERPART) + (1500 ⋅ (124 – DFPART))) × f--N----V---M-1---B---U----S-
The maximum EEE copy down time is given by the following equation
tdfcd = (34000 + (316 ⋅ ERPART) + (1500 ⋅ (124 – DFPART))) × f--N----V---M-1---B---U----S-
Worst case for Enable EEPROM Emulation allows for all the EEE records to have to be copied which is a
very low probability scenario only likely in the case that the EEE is mostly full of unchanging data (the
records for which are stored in consecutive D-Flash sectors).
Table A-19. NVM Timing Characteristics
Conditions are as shown in Table A-4, with fNVMBUS = 50MHz and fNVMOP= 1MHz unless otherwise noted.
Num C
Rating
Symbol
Min
Typ
Max
1 D External oscillator clock
fNVMOSC
2
—
2 D Bus frequency for programming or erase operations
fNVMBUS
1
—
3 D Operating frequency
fNVMOP
800
—
4 D P-Flash phrase programming
tbwpgm
—
162
5a D P- Flash phrase program time using D-LOAD on 4 blocks tbwpgm4
—
231
5b D P-Flash phrase program time using D-LOAD on 3 blocks tbwpgm3
—
208
5c D P-Flash phrase program time using D-LOAD on 2 blocks tbwpgm2
—
185
6 P P-Flash sector erase time
tera
—
20
7 P Erase All Blocks (Mass erase) time
tmass
—
101
7a D Unsecure Flash
8 D P-Flash erase verify (blank check) time(2)
tuns
—
101
tcheck
—
—
9a D D-Flash word programming one word
tdpgm
—
88
9b D D-Flash word programming two words
tdpgm
—
153
9c D D-Flash word programming three words
tdpgm
—
212
9d D D-Flash word programming four words
tdpgm
—
282
9e D D-Flash word programming four words crossing row
tdpgm
—
298
boundary
10 D D-Flash sector erase time
teradf
—
5.2(3)
11 D D-Flash erase verify (blank check) time
tcheck
—
—
12 D EEE copy down (mask sets 5M48H, 3M25J, 2M53J,
1M12S, 1N35H, 1N36H)
tdfrcd
—
255000
12 D EEE copy down (other mask sets)
tdfrcd
—
1. Restrictions for oscillator in crystal mode apply.
2. Valid for both “Erase verify all” or “Erase verify block” on 256K block without failing locations
3. This is a typical value for a new device
4. Maximum partitioning
205000
50(1)
50
1050
173
264
233
202
21
102
102
335002
95
165
230
316
342
21
17500
275000(4)
225000(5)
Unit
MHz
MHz
kHz
µs
µs
µs
µs
ms
ms
ms
tcyc
µs
µs
µs
µs
µs
ms
tcyc
tcyc
tcyc
1230
MC9S12XE-Family Reference Manual Rev. 1.25
Freescale Semiconductor