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S912XEG128J2MAA Datasheet, PDF (1118/1324 Pages) Freescale Semiconductor, Inc – Microcontrollers | |||
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Chapter 28 768 KByte Flash Module (S12XFTM768K4V2)
Table 28-42. Load Data Field Command Error Handling
Register
Error Bit
Error Condition
Set if CCOBIX[2:0] != 101 at command launch
Set if command not available in current mode (see Table 28-30)
Set if an invalid global address [22:0] is supplied(1)
FSTAT
ACCERR
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if a Load Data Field command sequence is currently active and the selected
block has previously been selected in the same command sequence
Set if a Load Data Field command sequence is currently active and global
address [17:0] does not match that previously supplied in the same command
sequence
FPVIOL Set if the global address [22:0] points to a protected area
MGSTAT1 None
MGSTAT0 None
FERSTAT
EPVIOLIF None
1. As deï¬ned by the memory map for FTM1024K5.
28.4.2.6 Program P-Flash Command
The Program P-Flash operation will program a previously erased phrase in the P-Flash memory using an
embedded algorithm.
CAUTION
A P-Flash phrase must be in the erased state before being programmed.
Cumulative programming of bits within a Flash phrase is not allowed.
Table 28-43. Program P-Flash Command FCCOB Requirements
CCOBIX[2:0]
FCCOB Parameters
000
0x06
Global address [22:16] to
identify P-Flash block
001
Global address [15:0] of phrase location to be programmed(1)
010
Word 0 program value
011
Word 1 program value
100
Word 2 program value
101
Word 3 program value
1. Global address [2:0] must be 000
Upon clearing CCIF to launch the Program P-Flash command, the Memory Controller will program the
data words to the supplied global address and will then proceed to verify the data words read back as
expected. The CCIF ï¬ag will set after the Program P-Flash operation has completed.
1118
MC9S12XE-Family Reference Manual Rev. 1.25
Freescale Semiconductor
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