S912XEG128J2MAA Datasheet, PDF (1225/1324 Pages) Freescale Semiconductor, Inc – Microcontrollers

A.3.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by
t = (400) ⋅ -f-_N----_V---_M-1---_B---_U----_S-
Appendix A Electrical Characteristics
A.3.1.5 Load Data Field (FCMD=0x05)
The maximum load data field time is given by
t = (450) ⋅ _f--N----_V---_M-1---_B---_U----_S-
A.3.1.6 Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words + associated eight ECC bits is dependant
on the bus frequency as a well as on the frequency f_NVMOP and can be calculated according to the
following formulas, whereby N_DLOAD is the number of extra blocks being programmed by the Load Data
Field command (DLOAD), i.e. programming 2,3,4 blocks using DLOAD, N_DLOAD =1,2,3 respectively.
The typical phrase programming time can be calculated using the following equation
tbwpgm = (128 + (12 ⋅ NDLOAD)) ⋅ _{f--N-----V----M-1-----O-----P--} + (1725 + (510 ⋅ NDLOAD)) ⋅ _{f--N-----V----M---1---B----U-----S--}
The maximum phrase programming time can be calculated using the following equation
tbwpgm = (130 + (14 ⋅ NDLOAD)) ⋅ _{f--N-----V----M-1-----O-----P--} + (2125 + (510 ⋅ NDLOAD)) ⋅ _{f--N-----V----M---1---B----U-----S--}
A.3.1.7 P-Flash Program Once (FCMD=0x07)
The maximum P-Flash Program Once time is given by
tbwpgm ≈ 162 ⋅ _{f--N-----V----M-1-----O-----P--} + 2400 ⋅ _{f--N-----V----M---1---B----U-----S--}
A.3.1.8 Erase All Blocks (FCMD=0x08)
For S12XEP100, S12XEP768, S12XEQ512 and S12XEQ384 erasing all blocks takes:
tmass ≈ 100100 ⋅ _{f--N-----V----M1------O-----P--} + 70000 ⋅ _{f--N-----V----M---1---B----U-----S--}
For S12XET256, S12XEA256 and S12XEG128 erasing all blocks takes:
tmass ≈ 100100 ⋅ _{f--N-----V----M1------O-----P--} + 35000 ⋅ _{f--N-----V----M---1---B----U-----S--}
Freescale Semiconductor
MC9S12XE-Family Reference Manual Rev. 1.25
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