TDA3MV Datasheet, PDF (95/256 Pages) Texas Instruments – TDA3x SoC for Advanced Driver Assistance Systems (ADAS) 15mm Package (ABF) Silicon Revision 2.0

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TDA3MV, TDA3MA
TDA3LX, TDA3LA
SPRS964C – JUNE 2016 – REVISED JULY 2017
Table 5-16. Dual Voltage LVCMOS DC Electrical Characteristics (continued)
PARAMETER
DESCRIPTION
MIN
NOM
MAX
UNIT
I_OZ
I_OZ(I_PAD Current) at each IO pin. PAD is swept from 0
to VDDS and the Max(I(PAD)) is measured and is
reported as I_OZ
11.5
µA
I_{IN with pulldown enabled}
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
60
120
200
µA
I_{IN with pullup enabled}
Input current at each I/O pin with weak pullup enabled
60
120
210
µA
measured when PAD = 0
C_PAD
Z_O
3.3-V Mode
Pad capacitance (including package capacitance)
Output impedance (drive strength)
4
pF
40
Ω
V_IH
V_IL
V_HYS
V_OH
V_OL
I_DRIVE
Input high-level threshold
Input low-level threshold
Input hysteresis voltage
Output high-level threshold (I_OH =100µA)
Output low-level threshold (I_OL = 100µA)
Pin Drive strength at PAD Voltage = 0.45V or VDDS-
0.45V
2
200
VDDS-0.2
6
V
0.8
V
mV
V
0.2
V
mA
I_IN
Input current at each I/O pin
64
µA
I_OZ
I_OZ(I_PAD Current) at each IO pin. PAD is swept from 0
to VDDS and the Max(I(PAD)) is measured and is
reported as I_OZ
64
µA
I_{IN with pulldown enabled}
Input current at each I/O pin with weak pulldown
enabled measured when PAD = VDDS
10
100
290
µA
I_{IN with pullup enabled}
Input current at each I/O pin with weak pullup enabled
40
100
200
µA
measured when PAD = 0
C_PAD
Z_O
Pad capacitance (including package capacitance)
Output impedance (drive strength)
4
pF
40
Ω
(1) VDDS in this table stands for corresponding power supply. For more information on the power supply name and the corresponding ball,
see Table 4-2, POWER [11] column.
5.8 Thermal Characteristics
For reliability and operability concerns, the maximum junction temperature of the Device has to be at or
below the T_J value identified in Table 5-4, Recommended Operating Conditions.
A BCI compact thermal model for this Device is available and recommended for use when modeling
thermal performance in a system.
Therefore, it is recommended to perform thermal simulations at the system level with the worst case
device power consumption.
5.8.1 Package Thermal Characteristics
Table 5-17 provides the thermal resistance characteristics for the package used on this device.
NOTE
Power dissipation of 4.14 W and an ambient temperature of 65ºC is assumed for ABF
package.
Table 5-17. Thermal Resistance Characteristics
NO. PARAMET DESCRIPTION
ER
T1 RΘ_JC
Junction-to-case
°C/W⁽¹⁾
1.41
AIR FLOW (m/s)⁽²⁾
N/A
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