PD17012_15 Datasheet, PDF (304/320 Pages) Renesas Technology Corp – 4-BIT SINGLE-CHIP MICROCONTROLLERS WITH DIGITAL TUNING SYSTEM HARDWARE

µPD17012, 17P012
25.2 Program Memory Write Procedure
Program memory can be written at high speed using the following procedure.
(1) Pull down unused pins via a resistor. Set the CLK pin to low.
(2) Supply 5 V to the VDD pin. Set the VPP pin to low.
(3) Wait for 10 µs and then supply 5 V to the VPP pin.
(4) Set the mode setting pin to program memory address 0-clear mode.
(5) Supply +6 V to the VDD pin and +12.5 V to the VPP pin.
(6) Set the program inhibit mode.
(7) Write data in the 1 ms write mode.
(8) Set the program inhibit mode.
(9) Set the verify mode. If the data is correct, go to step (10). If not, repeat steps (7) to (9).
(10) (X: Number of write operations from steps (7) to (9)) × 1 ms additional write.
(11) Set the program inhibit mode.
(12) Input four pulses to the CLK pin to increment the program memory address by one.
(13) Repeat steps (7) to (12) until the end address is reached.
(14) Set the program memory address 0-clear mode.
(15) Change the VDD and VPP pins to 5 V.
(16) Turn off the power.
The following figure shows steps (2) to (12).
Reset
VPP
VPP
VDD
GND
VDD + 1
VDD
VDD
GND
CLK
D0 to D7
Hi-z
X repetitions
Write
Verify
Additional
write
Data input
Hi-z
Data output
Hi-z
Data input
Address
increment
Hi-z
MD0
MD1
MD2
MD3
302
Data Sheet U10101EJ4V0DS