M16C62P_06 Datasheet, PDF (364/421 Pages) Renesas Technology Corp – 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES

M16C/62P Group (M16C/62P, M16C/62PT)
23. Electrical Characteristics
Table 23.53 Flash Memory Version Electrical Characteristics ⁽¹⁾ for 100 cycle products (B, U)
Symbol
−
−
−
−
−
−
−
−
tPS
−
Parameter
Program and Erase Endurance ⁽³⁾
Word Program Time (VCC1=5.0V)
Lock Bit Program Time
Block Erase Time
(VCC1=5.0V)
Erase All Unlocked Blocks Time ⁽²⁾
Flash Memory Circuit Stabilization Wait Time
Data Hold Time ⁽⁵⁾
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
Standard
Unit
Min.
Typ.
Max.
100
cycle
25
200
µs
25
200
µs
4
0.3
4
s
0.3
4
s
0.5
4
s
0.8
4
s
4×n
s
15
µs
20
year
Table 23.54 Flash Memory Version Electrical Characteristics ⁽⁶⁾ for 10,000 cycle products (B7, U7)
(Block A and Block 1 ⁽⁷⁾)
Symbol
−
−
−
−
tPS
−
Parameter
Program and Erase Endurance ^{(3, 8, 9)}
Word Program Time (VCC1=5.0V)
Lock Bit Program Time
Block Erase Time
(VCC1=5.0V)
Flash Memory Circuit Stabilization Wait Time
Data Hold Time ⁽⁵⁾
4-Kbyte block
Min.
10,000 ⁽⁴⁾
4
Standard
Typ.
25
25
0.3
20
Max.
15
Unit
cycle
µs
µs
s
µs
year
NOTES:
1. Referenced to VCC1=4.5 to 5.5V at Topr = 0 to 60 °C unless otherwise specified.
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
4. Maximum number of E/W cycles for which operation is guaranteed.
5. Ta (ambient temperature)=55 °C. As to the data hold time except Ta=55 °C, please contact Renesas Technology Corp. or an
authorized Renesas Technology Corp. product distributor.
6. Referenced to VCC1 = 4.5 to 5.5V at Topr = −40 to 85 °C (B7, U7 (T version)) / −40 to 125 °C (B7, U7 (V version)) unless
otherwise specified.
7. Table 23.54 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 23.53.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (B7 and U7).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Table 23.55 Flash Memory Version Program/Erase Voltage and Read Operation Voltage
Characteristics (at Topr = 0 to 60 °C(B, U), Topr = −40 to 85 °C (B7, U7 (T version)) / −40
to 125 °C (B7, U7 (V version))
Flash Program, Erase Voltage
Flash Read Operation Voltage
VCC1 = 5.0 V ± 0.5 V
VCC1=4.0 to 5.5 V
Rev.2.41 Jan 10, 2006 Page 349 of 390
REJ09B0185-0241