MB87P2020 Datasheet, PDF (339/356 Pages) Fujitsu Component Limited. – Colour LCD/CRT/TV Controller

2 Restrictions
Hints and Restrictions
2.1 ESD characteristics for I/O buffers
Table 2-1 shows the ESD characteristics for all I/O buffers for Lavender and Jasmine. For a complete pin-
ning table see hardware manual.
(A) Listed values are determined by using the Human Body Model(C=100pF, R=1.5k ohm). The test pro-
cedure is described in MIL-STD-883.
(B) The worst values among the four conditions (VDD positive, VDD negative, VSS positive, and VSS neg-
ative) are shown.
(C) The pass/fail criteria of 1uA leakage current was used for all the I/Os except for the I/Os described with
„Leak mode“.
(D) In the case of „Leak mode“, the leakage current will increase but the I/Os will continue to be functional.
(E) The I/Os marked with „Destruction mode“, however, may be destroyed if the higher voltage than shown
in the table is applied. Once they are destroyed, they may become non-functional.
Table 2-1: ESD performance for buffer types
Buffer Type
B3NNLMX
B3NNNMX
BFNNQHX
BFNNQLX
BFNNQMX
IPBIX
ITAMX
ITAVDX
ITAVSX
ITBSTX
ITCHX
Description
Bidirectional True buffer (3.3V
CMOS, IOL=4mA,Low Noise
type)
Bidirectional True buffer (3.3V
CMOS, IOL=4mA)
Bidirectional True buffer (5V
Tolerant, IOL=8mA, High
speed type)
Bidirectional True buffer (5V
Tolerant, IOL=2mA, High
speed type)
5V tolerant, bidirectional true
buffer 3.3V CMOS, IOL/
IOH=4mA
Input True Buffer for DRAM
TEST (2.5V CMOS with 25K
Pull-up)
(SDRAM test only)
Analog Input buffer
Analog Power Supply
Analog GND
Input True Buffer for DRAM
TEST (2.5V CMOS with 25K
Pull-down)
(SDRAM test only)
Input True buffer (2.5V CMOS)
ESD performance of
MB87P2020
+/-500V, Destruction mode
+/-500V, Destruction mode
+/-2000V, Leak mode
+/-2000V, Leak mode
+/-2000V, Leak mode
+/-2000V
+/-2000V
N.A.
N.A.
+/-2000V
+/-2000V
Restrictions
Page 339