MC68HC908LD64 Datasheet, PDF (71/362 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH Memory
FLASH Program Operation
Algorithm for programming
a row (64 bytes) of FLASH memory
1
Set PGM bit
2 _{Write any data to any FLASH address}
within the row address range desired
3
Wait for a time, t_nvs
4
Set HVEN bit
5
Wait for a time, t_pgs
6
For 47,616 bytes array
Write data to the FLASH address
to be programmed
For 13K-bytes array
Write even byte to OSD FLASH Even
High Byte Write Buffer at $0066.
Write odd byte to the FLASH address
to be programmed.
7
Wait for a time, t_prog
Completed
Y
programming
this row?
N
9
NOTE:
The time between each FLASH address change (step 6 to step 6), or
the time between the last FLASH address programmed
10
to clearing PGM bit (step 6 to step 9)
must not exceed the maximum programming
time, t_PROG max.
11
This row program algorithm assumes the row/s
to be programmed are initially erased.
12
Clear PGM bit
Wait for a time, t_nvh
Clear HVEN bit
Wait for a time, t_rcv
End of Programming
Figure 4-5. FLASH Programming Flowchart
MC68HC908LD64 — Rev. 3.0
Freescale Semiconductor
FLASH Memory
Data Sheet
71