MC68HC908LD64 Datasheet, PDF (66/362 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH Memory
4.4 FLASH Control Registers
The two FLASH control registers control FLASH program and erase
operations.
This register controls the 47,616-byte array:
Address: $FE07
Bit 7
6
5
4
3
2
1
Bit 0
Read: 0
0
0
0
HVEN MASS ERASE PGM
Write:
Reset: 0
0
0
0
0
0
0
0
= Unimplemented
Figure 4-2. 47,616-byte FLASH Control Register (FLCR)
This register controls the 13K-byte array:
Address: $FE0A
Bit 7
6
5
4
3
2
1
Bit 0
Read: 0
0
0
0
HVEN1 MASS1 ERASE1 PGM1
Write:
Reset: 0
0
0
0
0
0
0
0
= Unimplemented
Figure 4-3. 13K-byte FLASH Control Register (FLCR1)
FLCR1 is used with the OSD FLASH even high byte write buffer
(OSDEHBUF) in programming operations. See 4.4.1 OSD FLASH Even
High Byte Write Buffer (OSDEHBUF).
The following are bit definitions for FLCR and FLCR1.
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
Data Sheet
66
FLASH Memory
MC68HC908LD64 — Rev. 3.0
Freescale Semiconductor