MC68HC908LD64 Datasheet, PDF (64/362 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH Memory
4.2 Introduction
This section describes the operation of the embedded FLASH memory.
This memory can be read, programmed, and erased from a single
external supply. The program and erase operations are enabled through
the use of an internal charge pump.
Addr.
$FE07
$FE08
$FE0A
$FE0B
$0066
Register Name
Bit 7
47,616 Bytes FLASH ^{Read: 0}
Control Register Write:
(FLCR) _{Reset: 0}
47,616 Bytes FLASH ^Read:
Block Protect Register Write:
(FLBPR) _Reset:
BPR7
0
13K-Bytes FLASH ^{Read: 0}
Control Register Write:
(FLCR1) _{Reset: 0}
13K-Bytes FLASH ^Read:
Block Protect Register Write:
(FLBPR1) _Reset:
BPR17
0
OSD FLASH Even ^Read:
High Byte Write Buffer Write:
(OSDEHBUF) _Reset:
DOT15
6
0
0
BPR6
0
0
0
BPR16
0
DOT14
5
0
0
BPR5
0
0
0
BPR15
0
DOT13
4
3
0
HVEN
0
0
BPR4 BPR3
0
0
0
HVEN1
0
0
BPR14 BPR13
0
0
DOT12 DOT11
Unaffected by reset
2
1
MASS ERASE
0
0
BPR2 BPR1
0
0
MASS1 ERASE1
0
0
BPR12 BPR11
0
0
DOT10 DOT9
Bit 0
PGM
0
0
0
PGM1
0
0
0
DOT8
Figure 4-1. FLASH I/O Register Summary
4.3 Functional Description
The MC68HC908LD64 FLASH memory contains two arrays:
• 13,312-byte array
• 47,616-byte array
An additional 32 bytes of FLASH user vectors, $FFE0–$FFFF, are in the
same array as the 47,616-byte. The size, address range, and memory
usage of the arrays are summarized in Table 4-1.
NOTE: An erased bit reads as logic 1 and a programmed bit reads as logic 0.
Data Sheet
64
FLASH Memory
MC68HC908LD64 — Rev. 3.0
Freescale Semiconductor