MC9S12HY64 Datasheet, PDF (739/792 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Electrical Characteristics
NOTE
All values shown in Table A-17 are preliminary and subject to further
characterization.
Table A-17. NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min Typ Max Unit
Program Flash Arrays
1 C Data retention at an average junction temperature of T_Javg =
85°C⁽¹⁾ after up to 10,000 program/erase cycles
t_NVMRET
2 C Program Flash number of program/erase cycles
(-40°C ≤ tj ≤ 150°C)
n_FLPE
20 100⁽²⁾ —
10K 100K⁽³⁾ —
Years
Cycles
Data Flash Array
3 C Data retention at an average junction temperature of T_Javg =
85°C¹ after up to 50,000 program/erase cycles
t_NVMRET
5
100²
—
Years
4 C Data retention at an average junction temperature of T_Javg =
85°C¹ after up to 10,000 program/erase cycles
t_NVMRET
10
100²
—
Years
5 C Data retention at an average junction temperature of T_Javg =
85°C¹ after less than 100 program/erase cycles
t_NVMRET
20
100²
—
Years
6 C Data Flash number of program/erase cycles (-40°C ≤ tj ≤ 150°C) n_FLPE
50K 500K³ — Cycles
1. T_Javg does not exceed 85°C in a typical temperature profile over the lifetime of a consumer, industrial or automotive
application.
2. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618
3. Spec table quotes typical endurance evaluated at 25°C for this product family. For additional information on how Freescale
defines Typical Endurance, please refer to Engineering Bulletin EB619.
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
Freescale Semiconductor
739