MC9S12HY64 Datasheet, PDF (564/792 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve
single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation requires that
programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is always read
by half-phrase, only one single bit fault in an aligned 4 byte half-phrase containing the byte or word
accessed will be corrected.
16.1.1 Glossary
Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store for data.
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two
sets of aligned double words with each set including 7 ECC bits for single bit fault correction and double
bit fault detection within each double word.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 512 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field.
16.1.2 Features
16.1.2.1 P-Flash Features
• 48 Kbytes of P-Flash memory composed of one 48 Kbyte Flash block divided into 96 sectors of
512 bytes
• Single bit fault correction and double bit fault detection within a 32-bit double word during read
operations
• Automated program and erase algorithm with verify and generation of ECC parity bits
• Fast sector erase and phrase program operation
• Ability to read the P-Flash memory while programming a word in the D-Flash memory
• Flexible protection scheme to prevent accidental program or erase of P-Flash memory
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
Freescale Semiconductor
564