MC9S12HY64 Datasheet, PDF (735/792 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Electrical Characteristics
A.3.1.3 Erase Verify P-Flash Section (FCMD=0x03)
The maximum time to erase verify a section of P-Flash depends on the number of phrases being verified
(N_VP) and is given by:
t
≈
( 450
+
N_VP)
⋅
----------¹-----------
f _NVMBUS
A.3.1.4 Read Once (FCMD=0x04)
The maximum read once time is given by:
t = 400 ⋅ _f---_N----_V---_M¹----_B---_U----_S
A.3.1.5 Program P-Flash (FCMD=0x06)
The programming time for a single phrase of four P-Flash words and the two seven-bit ECC fields is
dependent on the bus frequency, f_NVMBUS, as well as on the NVM operating frequency, f_NVMOP.
The typical phrase programming time is given by:
t_ppgm ≈ 164 ⋅ -_f--_N----_V--¹-_M----_O----_P + 2000 ⋅ _f---_N----_V---_M¹----_B---_U----_S
The maximum phrase programming time is given by:
t_ppgm
≈
164
⋅
---------¹---------
f _NVMOP
+
2500
⋅
----------¹-----------
f _NVMBUS
A.3.1.6 Program Once (FCMD=0x07)
The maximum time required to program a P-Flash Program Once field is given by:
t
≈
164
⋅
-_f--_N----_V--¹-_M----_O----_P
+
2150
⋅
----------¹-----------
f _NVMBUS
A.3.1.7 Erase All Blocks (FCMD=0x08)
The time required to erase all blocks is given by:
for 64 Kbyte P-Flash and 4 Kbyte D-Flash
t_mass
≈
100100
⋅
---------¹---------
f _NVMOP
+
38000
⋅
f^---_N^----_V^---_M^1----_B^---_U^----_S
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
Freescale Semiconductor
735