MC9S12HY64 Datasheet, PDF (14/792 Pages) Freescale Semiconductor, Inc – S12 Microcontrollers

Device Overview MC9S12HY/HA-Family
— Accumulator offsets using A, B, or D accumulators
— Automatic index predecrement, preincrement, postdecrement, and postincrement (by –8 to +8)
1.3.2 On-Chip Flash with ECC
On-chip flash memory on the MC9S12HY/HA features the following:
• Up to 64 Kbyte of program flash memory
— 32 data bits plus 7 syndrome ECC (error correction code) bits allow single bit error correction
and double fault detection
— Erase sector size 512 bytes
— Automated program and erase algorithm
— User margin level setting for reads
— Protection scheme to prevent accidental program or erase
• 4 Kbyte data flash space
— 16 data bits plus 6 syndrome ECC (error correction code) bits allow single bit error correction
and double fault detection
— Erase sector size 256 bytes
— Automated program and erase algorithm
— User margin level setting for reads
1.3.3 On-Chip SRAM
• Up to 4 Kbytes of general-purpose RAM, no single cycle misaligned access
1.3.4 Main External Oscillator (XOSC)
• Loop control Pierce oscillator using a 4 MHz to 16 MHz crystal
— Current gain control on amplitude output
— Signal with low harmonic distortion
— Low power
— Good noise immunity
— Eliminates need for external current limiting resistor
— Transconductance sized for optimum start-up margin for typical crystals
1.3.5 Internal RC Oscillator (IRC)
• Trimmable internal reference clock.
— Frequency: 1 MHz
— Trimmed accuracy over –40˚C to +125˚C ambient temperature range: ±2.0%
— Trimmed accuracy over –40˚C to +85˚C ambient temperature range: ±1.5%
MC9S12HY/HA-Family Reference Manual, Rev. 1.04
14
Freescale Semiconductor