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LM3S3748 Datasheet, PDF (695/753 Pages) List of Unclassifed Manufacturers – Microcontroller
LM3S3748 Microcontroller
24.2.2
Clocks
Table 24-8. Phase Locked Loop (PLL) Characteristics
Parameter Parameter Name
Min Nom Max Unit
fref_crystal
fref_ext
fpll
Crystal referencea
3.579545 - 16.384 MHz
External clock referencea 3.579545 - 16.384 MHz
PLL frequencyb
-
400 - MHz
TREADY PLL lock time
-
- 0.5 ms
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
(RCC) register.
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
Table 24-9. Clock Characteristics
Parameter Parameter Name
Min Nom Max Unit
fIOSC
Internal 12 MHz oscillator frequency
fIOSC30KHZ
Internal 30 KHz oscillator frequency
fXOSC
Hibernation module oscillator frequency
fXOSC_XTAL
Crystal reference for hibernation oscillator
fXOSC_EXT
External clock reference for hibernation module
fMOSC
Main oscillator frequency
tMOSC_per
Main oscillator period
fref_crystal_bypass
Crystal reference using the main oscillator (PLL in BYPASS mode)
a
8.4 12
15.6 MHz
21 30
39 KHz
- 4.194304 - MHz
- 4.194304 - MHz
- 32.768 - KHz
1
- 16.384 MHz
61
-
1000 ns
1
- 16.384 MHz
fref_ext_bypass External clock reference (PLL in BYPASS mode)a
0
-
50 MHz
fsystem_clock
System clock
0
-
50 MHz
a. The ADC must be clocked from the PLL or directly from a 14-MHz to 18-MHz clock source to operate properly.
Table 24-10. Crystal Characteristics
Parameter Name
Value
Units
Frequency
16
12
8
6
4
3.5 MHz
Frequency tolerance
±50 ±50 ±50 ±50 ±50 ±50 ppm
Aging
±5
±5
±5
±5
±5
±5 ppm/yr
Oscillation mode
Parallel Parallel Parallel Parallel Parallel Parallel -
Temperature stability (-40°C to 85°C) ±25 ±25 ±25 ±25 ±25 ±25 ppm
Motional capacitance (typ)
13.9 18.5 27.8 37.0 55.6 63.5 pF
Motional inductance (typ)
7.15 9.5 14.3 19.1 28.6 32.7 mH
Equivalent series resistance (max)
80 100 120 160 200 220 Ω
Shunt capacitance (max)
10
10
10
10
10
10 pF
Load capacitance (typ)
16
16
16
16
16
16 pF
Drive level (typ)
100 100 100 100 100 100 µW
April 08, 2008
695
Preliminary