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C8051F124-GQR Datasheet, PDF (200/350 Pages) Silicon Laboratories – Mixed Signal ISP Flash MCU Family
C8051F120/1/2/3/4/5/6/7
C8051F130/1/2/3
Table 15.1. Flash Electrical Characteristics
VDD = 2.7 to 3.6 V; –40 to +85 °C
Parameter
Conditions
Min
Typ
Max
Flash Size1
C8051F12x and C8051F130/1
1313282
Flash Size1
C8051F132/3
65792
Endurance
20k
100k
Erase Cycle Time
10
12
14
Write Cycle Time
40
50
60
Notes:
1. Includes 256-byte Scratch Pad Area
2. 1024 Bytes at location 0x1FC00 to 0x1FFFF are reserved.
Units
Bytes
Bytes
Erase/Write
ms
µs
15.1.1. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written and erased using the
MOVX write instruction (as described in Section 15.1.2 and Section 15.1.3) and read using the MOVC
instruction. The COBANK bits in register PSBANK (SFR Definition 11.1) control which portion of the Flash
memory is targeted by writes and erases of addresses above 0x07FFF. For devices with 64 kB of Flash.
the COBANK bits should always remain set to ‘01’ to ensure that Flash write, erase, and read operations
are valid.
Two additional 128-byte sectors (256 bytes total) of Flash memory are included for non-volatile data stor-
age. The smaller sector size makes them particularly well suited as general purpose, non-volatile scratch-
pad memory. Even though Flash memory can be written a single byte at a time, an entire sector must be
erased first. In order to change a single byte of a multi-byte data set, the data must be moved to temporary
storage. The 128-byte sector-size facilitates updating data without wasting program memory or RAM
space. The 128-byte sectors are double-mapped over the normal Flash memory for MOVC reads and
MOVX writes only; their addresses range from 0x00 to 0x7F and from 0x80 to 0xFF (see Figure 15.2). To
access the 128-byte sectors, the SFLE bit in PSCTL must be set to logic 1. Code execution from the 128-
byte Scratchpad areas is not permitted. The 128-byte sectors can be erased individually, or both at the
same time. To erase both sectors simultaneously, the address 0x0400 should be targeted during the erase
operation with SFLE set to ‘1’. See Figure 15.1 for the memory map under different COBANK and SFLE
settings.
200
Rev. 1.4