M16C80 Datasheet, PDF (282/358 Pages) Renesas Technology Corp – RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/80 SERIES

M16C/80 Group
29. Flash Memory Version
29. Flash Memory Version
Outline Performance
Table 29.1 shows the outline performance of the M16C/80 (flash memory version).
Table 29.1 Outline Performance of the M16C/80 (flash memory version)
Item
Performance
Power supply voltage
5V version:
f(XIN)=20MHz, without wait, 4.2V to 5.5V
f(XIN)=10MHz, without wait, 2.7V to 5.5V
Program/erase voltage
5V version: 4.2V to 5.5 V
f(BCLK)=12.5MHz, with one wait
f(BCLK)=6.25MHz, without wait
Flash memory operation mode Three modes (parallel I/O, standard serial I/O, CPU rewrite)
Erase block User ROM area
division
Boot ROM area
See Figure 29.3
One division (8 Kbytes) (Note 1)
Program method
In units of pages (in units of 256 bytes)
Erase method
Program/erase control method
Collective erase/block erase
Program/erase control by software command
Protect method
Protected for each block by lock bit
Number of commands
8 commands
Program/erase count
100 times
Data holding
10 years
ROM code protect
Parallel I/O and standard serial modes are supported.
Note: The boot ROM area contains a standard serial I/O mode control program which is stored in
it when shipped from the factory. This area can be erased and programmed in only parallel
I/O mode.
Rev.1.00 Aug. 02, 2005 ^{Page 271} of 329
REJ09B0187-0100