MC68HC08AZ60A Datasheet, PDF (82/480 Pages) Motorola, Inc – Microcontrollers

EEPROM-2
6.5 Functional Description
The 512 bytes of EEPROM-2 are located at $0600-$07FF and can be
programmed or erased without an additional external high voltage
supply. The program and erase operations are enabled through the use
of an internal charge pump. For each byte of EEPROM, the write/erase
endurance is 10,000 cycles.
6.5.1 EEPROM-2 Configuration
The 8-bit EEPROM-2 Non-Volatile Register (EE2NVR) and the 16-bit
EEPROM-2 Timebase Divider Non-Volatile Register (EE2DIVNVR)
contain the default settings for the following EEPROM-2 configurations:
• EEPROM-2 Timebase Reference
• EEPROM-2 Program/Erase Protection
• EEPROM-2 Block Protection
EE2NVR and EE2DIVNVR are non-volatile EEPROM registers. They
are programmed and erased in the same way as EEPROM bytes. The
contents of these registers are loaded into their respective volatile
registers during a MCU reset. The values in these read/write volatile
registers define the EEPROM-2 configurations.
For EE2NVR, the corresponding volatile register is the EEPROM-2
Array Configuration Register (EEACR). For the EE2DIVNVR (two 8-bit
registers: EE2DIVHNVR and EE2DIVLNVR), the corresponding volatile
register is the EEPROM-2 Divider Register (EE2DIV: EE2DIVH and
EE2DIVL).
6.5.2 EEPROM-2 Timebase Requirements
A 35µs timebase is required by the EEPROM-2 control circuit for
program and erase of EEPROM-2 content. This timebase is derived
from dividing the CGMXCLK or bus clock (selected by EEDIVCLK bit in
Mask Option Register B) using a timebase divider circuit controlled by
the 16-bit EEPROM-2 Timebase Divider EE2DIV Register (EE2DIVH
and EE2DIVL).
Advance Information
82
EEPROM-2
MC68HC08AZ60A — Rev 0.0
MOTOROLA