MC68HC08AZ60A Datasheet, PDF (458/480 Pages) Motorola, Inc – Microcontrollers

Electrical Specifications
25.12 RAM Memory Characteristics
Table 25-3.
Characteristic
RAM Data Retention Voltage
Symbol
V_RDR
Min
Max
Unit
0.7
—
V
25.13 EEPROM Memory Characteristics
Table 25-4.
Characteristic
EEPROM Programming Time per Byte
EEPROM Erasing Time per Byte
EEPROM Erasing Time per Block
EEPROM Erasing Time per Bulk
EEPROM Programming Voltage Discharge
Period
Number of Programming Operations to the Same
EEPROM Byte Before Erase ⁽¹⁾
EEPROM Write/Erase Cycles
@ 10 ms Write Time
EEPROM Data Retention
After 10,000 Write/Erase Cycles
EEPROM Programming Maximum Time to
‘AUTO’ Bit Set
EEPROM Erasing Maximum Time to ‘AUTO’ Bit
Set
Symbol
t_EEPGM
t_EEBYTE
t_EEBLOCK
t_EEBULK
t_EEFPV
—
—
—
—
—
Min
Max
Unit
10
—
ms
10
—
ms
10
—
ms
10
—
ms
100
—
µs
—
8
—
10,000
—
Cycles
10
—
Years
—
500
µs
—
8
ms
NOTES:
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must
be erased before it can be programmed again.
Advance Information
458
Electrical Specifications
MC68HC08AZ60A — Rev 0.0
MOTOROLA