MC9S12HZ256 Datasheet, PDF (653/692 Pages) Freescale Semiconductor, Inc – HCS12 Microcontrollers

Appendix A Electrical Characteristics
Table A-22. Expanded Bus Timing Characteristics (5V Range)
Conditions are 4.75V < VDDX < 5.25V, Junction Temperature -40˚C to +140˚C, C_LOAD = 50pF
Num C
Rating
Symbol
Min
Typ
1
P Frequency of operation (E-clock)
f_o
0
2
P Cycle time
t_cyc
40
3
D Pulse width, E low
4
D Pulse width, E high¹
PW_EL
19
PW_EH
19
5
D Address delay time
t_AD
6
D Address valid time to E rise (PW_EL–t_AD)
t_AV
11
7
D Muxed address hold time
t_MAH
2
8
D Address hold to data valid
t_AHDS
7
9
D Data hold to address
t_DHA
2
10
D Read data setup time
t_DSR
13
11
D Read data hold time
t_DHR
0
12
D Write data delay time
t_DDW
13
D Write data hold time
14
D Write data setup time¹ (PW_EH–t_DDW)
15
D Address access time¹ (t_cyc–t_AD–t_DSR)
16
D E high access time¹ (PW_EH–t_DSR)
t_DHW
2
t_DSW
12
t_ACCA
19
t_ACCE
6
17
D Non-multiplexed address delay time
t_NAD
18
D Non-muxed address valid to E rise (PW_EL–t_NAD)
t_NAV
14
19
D Non-multiplexed address hold time
t_NAH
2
20
D Chip select delay time
21
D Chip select access time¹ (t_cyc–t_CSD–t_DSR)
t_CSD
t_ACCS
11
22
D Chip select hold time
t_CSH
2
23
D Chip select negated time
t_CSN
8
24
D Read/write delay time
t_RWD
25
D Read/write valid time to E rise (PW_EL–t_RWD)
t_RWV
14
26
D Read/write hold time
t_RWH
2
27
D Low strobe delay time
t_LSD
28
D Low strobe valid time to E rise (PW_EL–t_LSD)
t_LSV
14
29
D Low strobe hold time
t_LSH
2
30
D NOACC strobe delay time
t_NOD
31
D NOACC valid time to E rise (PW_EL–t_NOD)
t_NOV
14
32
D NOACC hold time
t_NOH
2
33
D IPIPO[1:0] delay time
t_P0D
2
34
D IPIPO[1:0] valid time to E rise (PW_EL–t_P0D)
t_P0V
11
Max
Unit
25.0
MHz
ns
ns
ns
8
ns
ns
ns
ns
ns
ns
ns
7
ns
ns
ns
ns
ns
6
ns
ns
ns
16
ns
ns
ns
ns
7
ns
ns
ns
7
ns
ns
ns
7
ns
ns
ns
7
ns
ns
MC9S12HZ256 Data Sheet, Rev. 2.04
Freescale Semiconductor
653