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MC9S12HZ256 Datasheet, PDF (637/692 Pages) Freescale Semiconductor, Inc – HCS12 Microcontrollers
The setup time can be ignored for this operation.
Appendix A Electrical Characteristics
A.3.1.4 Mass Erase
Erasing a NVM block takes:
tmass ≈
The setup
20000
time can
⋅bef--N--i-g-V--n--1Mo---r--eO--d--P--for
this
operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
tcheck ≈ location ⋅ tcyc + 10 ⋅ tcyc
Table A-11. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1 D External Oscillator Clock
fNVMOSC
0.5
50 1
MHz
2 D Bus frequency for Programming or Erase Operations fNVMBUS
1
MHz
3 D Operating Frequency
fNVMOP
150
200
kHz
4 P Single Word Programming Time
tswpgm
46 2
74.5 3
µs
5 D Flash Burst Programming consecutive word 4
tbwpgm
20.4 2
31 3
µs
6 D Flash Burst Programming Time for 32 Words 4
tbrpgm
678.4 2
1035.5 3
µs
7 P Sector Erase Time
tera
20 5
26.7 3
ms
8 P Mass Erase Time
tmass
100 5
133 3
ms
9 D Blank Check Time Flash per block
tcheck
11 6
32778 7
tcyc
10 D Blank Check Time EEPROM per block
tcheck
11 6
20587
tcyc
1 Restrictions for oscillator in crystal mode apply!
2 Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency
fbus.
3 Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. Refer
to formulae in Sections Section A.3.1.1, “Single Word Programming,” through Section A.3.1.4, “Mass Erase,” for guidance.
4 urst Programming operations are not applicable to EEPROM
5 Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
6 Minimum time, if first word in the array is not blank
7 Maximum time to complete check on an erased block
MC9S12HZ256 Data Sheet, Rev. 2.04
Freescale Semiconductor
637