English
Language : 

1N4007 Datasheet, PDF (41/236 Pages) Naina Semiconductor ltd. – General Purpose Rectifier 1.0A
www.ti.com
TMS320C6652, TMS320C6654
SPRS841D – MARCH 2012 – REVISED JUNE 2016
5 Specifications
5.1 Absolute Maximum Ratings(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX UNIT
CVDD
-0.3
1.3
CVDD1
-0.3
1.3
DVDD15
-0.3
2.45
Supply voltage(3)
DVDD18
VREFSSTL
-0.3
2.45
0.49 × DVDD15 0.51 × DVDD15
V
VDDT1, VDDT2
-0.3
1.3
VDDR1, VDDR2, VDDR3, VDDR4
-0.3
2.45
AVDDA1, AVDDA2
-0.3
2.45
VSS Ground
0
LVCMOS (1.8V)
-0.3 DVDD18+0.3
Input voltage (VI)
DDR3
I2C
LVDS
-0.3
2.45
-0.3
2.45
V
-0.3 DVDD18+0.3
LJCB
-0.3
1.3
SerDes
-0.3
CVDD1+0.3
LVCMOS (1.8V)
-0.3 DVDD18+0.3
Output voltage (VO)
DDR3
I2C
-0.3
2.45
V
-0.3
2.45
SerDes
-0.3
CVDD1+0.3
Overshoot/undershoot (4)
LVCMOS (1.8V)
DDR3
I2C
20% Overshoot/Undershoot
for 20% of Signal Duty Cycle
Storage temperature, Tstg
–65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to VSS, unless otherwise noted.
(3) All voltage values are with respect to VSS.
(4) Overshoot/Undershoot percentage relative to I/O operating values - for example the maximum overshoot value for 1.8-V LVCMOS
signals is DVDD18 + 0.20 × DVDD18 and maximum undershoot value would be VSS - 0.20 × DVDD18
5.2 ESD Ratings
V(ESD)
Electrostatic
discharge (1)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(2)
Charged-device model (CDM), per JEDEC specification JESD22-C101(3)
VALUE
±1000
±250
UNIT
V
(1) Electrostatic discharge (ESD) to measure device sensitivity/immunity to damage caused by electrostatic discharges into the device.
(2) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions. Pins listed as ±1000 V may actually have higher performance.
(3) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±250 V
may actually have higher performance.
Copyright © 2012–2016, Texas Instruments Incorporated
Submit Documentation Feedback
Product Folder Links: TMS320C6652 TMS320C6654
Specifications
41