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MC68HC812A4 Datasheet, PDF (324/342 Pages) Motorola, Inc – 16-bit device composed of standard on-chip peripheral modules connected by an intermodule bus. Modules include
Electrical Characteristics
18.5 DC Electrical Characteristics
Characteristic(1)
Symbol Min
Max Unit
Input high voltage, all inputs
VIH 0.7 × VDD VDD + 0.3 V
Input low voltage, all inputs
VIL
VSS−0.3 0.2 × VDD V
Output high voltage, all I/O and output pins
Normal drive strength
IOH = −10.0 µA
IOH = −0.8 mA
Reduced drive strength
IOH = −4.0 µA
IOH = −0.3 mA
VDD − 0.2
—
VOH VDD − 0.8
—
V
VDD − 0.2
—
VDD − 0.8
—
Output low voltage, all I/O and output pins, normal drive strength
IOL = 10.0 µA
IOL = 1.6 mA
EXTAL, PAD[7:0], VRH, VRL, VFP, XIRQ, reduced drive strength
IOL = 3.6 µA
IOL = 0.6 mA
—
VSS +0.2
VOL
—
VSS +0.4
V
—
VSS +0.2
—
VSS +0.4
Input leakage current(2) all input pins
VIn = VDD or VSS — VRL, VRH, PAD6–PAD0
VIn = VDD or VSS — IRQ
VIn = VDD or VSS — PAD7
IIn
—
—
—
±1
±10
µA
±10
Three-state leakage, I/O ports, BKGD, and RESET
IOZ
—
±2.5
µA
Input capacitance
All input pins and ATD pins (non-sampling)
ATD pins (sampling)
All I/O pins
CIn
—
—
—
10
15
pF
20
Output load capacitance
All outputs except PS7–PS4
PS7–PS4
CL
—
—
90
pF
200
Active pullup, pulldown current
IRQ, XIRQ, DBE, ECLK, LSTRB, R/W, and BKGD
Ports A, B, C, D, F, G, H, J, P, S, and T
IAPU
50
500
µA
RAM standby voltage, power down
VSB
1.5
—
V
RAM standby current
ISB
—
10
µA
1. VDD = 5.0 Vdc ± 10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted
2. Specification is for parts in the –40 to +85 C range. Higher temperature ranges will result in increased current leakage.
MC68HC812A4 — Rev. 3.0
324
Electrical Characteristics
Advance Information
MOTOROLA