M16C6K9 Datasheet, PDF (260/292 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/6K9 Group
Flash memory version
Flash Memory
The M16C/6K9 (build-in flash memory version) contains the NEW DINOR type flash memory, which is applied
2 power supplies VCC=3.3V when using CPU reprogram or standard serial I/O mode. For the flash memory,
3 flash memory modes are available in which to read, program and erase. They are parallel I/O mode,
standard serial I/O mode and CPU reprogram mode. For parallel I/O mode, a programmer is used. For
standard serial I/O and CPU reprogram modes, the flash memory is manipulated by CPU. Each mode is
detailed in the pages to follow.
Fig. AB-1 shows that flash memory is divided into several blocks. Erasing is in block unit.
In addition to the ordinary user ROM area there is a boot ROM area to store the control program for the CPU
reprogram and standard serial I/O modes. The control program for standard serial I/O mode is stored in boot
ROM area when shipping from factory. User can reprogram the program to suit its own application system.
The area can only be erased or programmed by parallel I/O mode.
Chip name
M306K9FCL
The start address of
the flash memory
0E000016
M306K9F8L
0F000016
0E000016
Block 3 : 32K bytes
Block 6 : 64K bytes
0F000016
Block 5 : 32K bytes
0F800016
Block 4 : 8K bytes
0FA00016
0FC00016
0FE00016
0FF00016
0FFFFF16
Block 3 : 8K bytes
Block 2 : 8K bytes
Block 1 : 4K bytes
Block 0 : 4K bytes
User block area
0FF00016
0FFFFF16
4K bytes
Boot block area
Note 1: Boot ROM area can be reprogrammed only in parallel I/O mode.
(Access to any other areas is inhibited.)
Note 2: To specify a block, use the maximum even address in the block.
Fig.AB-1 Block diagram of flash memory version
Rev.1.00 Jun 06, 2003 page 260 of 290