MC68HC908MR8 Datasheet, PDF (60/372 Pages) Motorola, Inc – Microcontrollers

FLASH Memory
address range desired.
4. Wait for a time, t_NVS (minimum of 10 µs).
5. Set the HVEN bit.
6. Wait for a time, t_PGS (minimum of 5 µs).
7. Write data to the FLASH address to be programmed.
8. Wait for a time, t_PROG (minimum of 30 µs).
9. Repeat step 7 and step 8 until all the bytes within the row are
programmed.
10. Clear the PGM bit.
11. Wait for a time, t_NVH (minimum of 5 µs).
12. Clear the HVEN bit.
13. After a time, t_RCV (typically 1 µs), the memory can be accessed in
read mode again.
NOTE:
The time between each FLASH address change, or the time between
the last FLASH address programmed to clear the PGM bit, must not
exceed the maximum programming time, t_PROG.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps. Do not exceed t_PROG maximum. See 21.7
Memory Characteristics.
4.3 FLASH Programming Algorithm
Refer to Figure 4-2 for an algorithm for programming a row (32 bytes) of
FLASH memory.
Technical Data
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FLASH Memory
MC68HC908MR8 — Rev 4.1
Freescale Semiconductor