XC3S100E Datasheet, PDF (105/193 Pages) Xilinx, Inc – DC and Switching Characteristics

DC and Switching Characteristics
R
Table 2: Supply Voltage Thresholds for Power-On Reset
Symbol
Description
Min
Max
Units
V_CCINTT
V_CCAUXT
V_CCO2T
Threshold for the V_CCINT supply
Threshold for the V_CCAUX supply
Threshold for the V_CCO Bank 2 supply
0.4
1.0
V
0.8
2.0
V
0.4
1.0
V
Notes:
1. V_CCINT, V_CCAUX, and V_CCO supplies may be applied in any order.
2. To ensure successful power-on, V_CCINT, V_CCO Bank 2, and V_CCAUX supplies must rise through their respective threshold-voltage ranges with
no dips at any point.
Table 3: Power Voltage Levels Necessary for Preserving RAM Contents
Symbol
Description
V_DRINT
V_DRAUX
V_DRO
V_CCINT level required to retain RAM data
V_CCAUX level required to retain RAM data
V_CCO level required to retain RAM data
Notes:
1. RAM contents include configuration data.
Min
Units
1.0
V
2.0
V
1.0
V
Table 4: General Recommended Operating Conditions
Symbol
Description
Min
Nom
Max
Units
T_J
Junction temperature
Commercial
Industrial
0
-
85
°C
–40
-
100
°C
V_CCINT
V_CCO ⁽¹⁾
V_CCAUX ⁽²⁾
Internal supply voltage
Output driver supply voltage
Auxiliary supply voltage
1.140
1.200
1.260
V
1.140
-
3.450
V
2.375
2.500
2.625
V
Notes:
1. The V_CCO range given here spans the lowest and highest operating voltages of all supported I/O standards. The recommended V_CCO range
specific to each of the single-ended I/O standards is given in Table 7, and that specific to the differential standards is given in Table 9.
2. Only during DCM operation, it is recommended that the rate of change of V_CCAUX not exceed 10 mV/ms.
2
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DS312-3 (v1.0) March 1, 2005
Advance Product Specification