UPD78F9500MA-CAC-A Datasheet, PDF (309/342 Pages) Renesas Technology Corp – 8-Bit Single-Chip Microcontrollers

CHAPTER 19 ELECTRICAL SPECIFICATIONS
Flash Memory Programming Characteristics (TA = –40 to +85°C, 2.7 V ≤ VDD ≤ 5.5 V, VSS = 0 V)
Parameter
Symbol
Conditions
MIN. TYP. MAX. Unit
Supply current
Erasure count^{Note 1}
(per 1 block)
Chip erase time
Block erase time
Byte write time
Internal verify
Blank check
Retention years
IDD
NERASE
VDD = 5.5 V
TA = −40 to +85°C
1000
TCERASE TA = −10 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −10 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TBERASE TA = −10 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −10 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 100
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TA = −40 to +85°C,
NERASE ≤ 1000
4.5 V ≤ VDD ≤ 5.5 V
3.5 V ≤ VDD < 4.5 V
2.7 V ≤ VDD < 3.5 V
TWRITE TA = −40 to +85°C, NERASE ≤ 1000
TVERIFY Per 1 block
Per 1 byte
TBLKCHK Per 1 block
TA = 85°C^{Note 2}, NERASE ≤ 1000
10
7.0
mA
Times
0.8
s
1.0
s
1.2
s
4.8
s
5.2
s
6.1
s
1.6
s
1.8
s
2.0
s
9.1
s
10.1
s
12.3
s
0.4
s
0.5
s
0.6
s
2.6
s
2.8
s
3.3
s
0.9
s
1.0
s
1.1
s
4.9
s
5.4
s
6.6
s
150
μs
6.8
ms
27
μs
480
μs
Years
Notes 1. Depending on the erasure count (NERASE), the erase time varies. Refer to the chip erase time and block
erase time parameters.
2. When the average temperature when operating and not operating is 85°C.
Remark When a product is first written after shipment, “erase → write” and “write only” are both taken as one rewrite.
User’s Manual U18172EJ3V0UD
307