UPD78F9500MA-CAC-A Datasheet, PDF (238/342 Pages) Renesas Technology Corp – 8-Bit Single-Chip Microcontrollers

CHAPTER 16 FLASH MEMORY
Figure 16-9. Self Programming State Transition Diagram
User program
Normal mode
Operation setting
Specific sequence
Self programming mode
Operation
setting
Register for
self programming
Self programming
command completion/error
Flash memory
control block (hardware)
Self programming command
execution by HALT instruction
Self programming
command under execution
Operation reference
Flash memory
Table 16-10. Self Programming Controlling Commands
Command Name
Function
Time Taken from HALT Instruction Execution
to Command Execution End
Internal verify 1
This command is used to check if data has been
correctly written to the flash memory. It is used to
check whether data has been written to an entire
block.
Internal verify for 1 block (internal verify
command executed once): 6.8 ms
Internal verify 2
Block erasure^Note
This command is used to check if data has been
correctly written to the flash memory. It is used to
check whether data has been written in the same
block.
This command is used to erase a specified block.
Specify the block number before execution.
Internal verify for 1 byte: 27 μs
8.5 ms
Block blank check
This command is used to check if data in a specified
block has been erased. Specify the block number,
then execute this command.
480 μs
Byte write
This command is used to write 1-byte data to the
specified address in the flash memory. Specify the
write address and write data, then execute this
command.
150 μs
Note Set the number of retrials larger than the block erasure time divided by the time (8.5 ms) for one erase, in
accordance with the time (MAX. value) required for flash memory block erasures.
Remark The command internal verify 1 can be executed by specifying an address in the same block but internal
verify 2 is recommended if data is written to two or more addresses in the same block.
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User’s Manual U18172EJ3V0UD