UPD78F9234MC-5A4-A Datasheet, PDF (286/419 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

CHAPTER 19 FLASH MEMORY
Figure 19-9. Self Programming State Transition Diagram
User program
Normal mode
Operation setting
Specific sequence
Self programming mode
Operation
setting
Register for
self programming
Self programming
command completion/error
Flash memory
control block (hardware)
Self programming command
execution by HALT instruction
Self programming
command under execution
Operation reference
Flash memory
Table 19-10. Self Programming Controlling Commands
Command Name
Function
Time Taken from HALT Instruction Execution
to Command Execution End
Internal verify 1
This command is used to check if data has been
correctly written to the flash memory. It is used to
check whether data has been written to an entire
block.
Internal verify for 1 block (internal verify
command executed once): 6.8 ms
Internal verify 2
Block erasure^Note
This command is used to check if data has been
correctly written to the flash memory. It is used to
check whether data has been written to multiple
addresses in the same block.
This command is used to erase a specified block.
Specify the block number before execution.
Internal verify of 1 byte: 27 μs
8.5 ms
Block blank check
This command is used to check if data in a specified
block has been erased. Specify the block number,
then execute this command.
480 μs
Byte write
This command is used to write 1-byte data to the
specified address in the flash memory. Specify the
write address and write data, then execute this
command.
150 μs
Note Set the number of retrials larger than the block erasure time divided by the time (8.5 ms) for one erase, in
accordance with the time (MAX. value) required for flash memory block erasures.
Remark The internal verify 1 command can be executed by specifying an address in the same block, but internal
verify 2 command is recommended if data is written to multiple addresses in the same block.
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User’s Manual U17446EJ5V0UD