UPD78F9234MC-5A4-A Datasheet, PDF (275/419 Pages) Renesas Technology Corp – Old Company Name in Catalogs and Other Documents

CHAPTER 19 FLASH MEMORY
19.2 Memory Configuration
The 4/8 KB internal flash memory area is divided into 16/32 blocks and can be programmed/erased in block units.
All the blocks can also be erased at once, by using a dedicated flash memory programmer.
FFFFH
Special function resister
(256 bytes)
FF00H
FEFFH
FE00H
FDFFH
Internal high-speed RAM
(256 bytes)
Use prohibited
Flash memory
(4/8 KB)
0000H
19.3 Functional Outline
Figure 19-1. Flash Memory Mapping
• μPD78F9232
Block 15 (256 bytes)
Block 14 (256 bytes)
Block 13 (256 bytes)
Block 2 (256 bytes)
Block 1 (256 bytes)
Block 0 (256 bytes)
4 KB
• μPD78F9234
Block 31 (256 bytes)
Block 30 (256 bytes)
Block 29 (256 bytes)
Block 15 (256 bytes)
Block 14 (256 bytes)
Block 13 (256 bytes)
Block 2 (256 bytes)
Block 1 (256 bytes)
Block 0 (256 bytes)
8 KB
1FFFH
1F00H
1EFFH
1E00H
1DFFH
1D00H
1CFFH
1000H
0FFFH
0F00H
0EFFH
0E00H
0DFFH
0D00H
0CFFH
0300H
02FFH
0200H
01FFH
0100H
00FFH
0000H
The internal flash memory of the 78K0S/KB1+ can be rewritten by using the rewrite function of the dedicated flash
memory programmer, regardless of whether the 78K0S/KB1+ has already been mounted on the target system or not
(on-board/off-board programming).
The function for rewriting a program with the user program (self programming), which is ideal for an application
when it is assumed that the program is changed after production/shipment of the target system, is provided.
Refer to Table 19-1 for the flash memory writing control function.
In addition, a security function that prohibits rewriting the user program written to the internal flash memory is also
supported, so that the program cannot be changed by an unauthorized person.
Refer to 19.7.3 Security settings for details on the security function.
User’s Manual U17446EJ5V0UD
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