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301467-005 Datasheet, PDF (263/426 Pages) Intel Corporation – Express Chipset
Electrical Characteristics
R
Symbol
Signal
Group
Parameter
VOL_H
VOH_H
IOL_H
ILEAK_H
CPAD
CPCKG
(a, b) Host GTL+ Output Low
Voltage
(a, b) Host GTL+ Output High
Voltage
(a, b) Host GTL+ Output Low
Current
(a, c) Host GTL+ Input Leakage
Current
(a, c) Host GTL+ Input
Capacitance
(a, c) Host GTL+ Input
Capacitance (common clock)
DDR Interface
VIL(DC) (DDR)
(h) DDR Input Low Voltage
Min
—
VTT – 0.1
—
—
2
0.90
—
Nom
—
—
—
—
—
—
—
VIH(DC) (DDR)
VIL(AC) (DDR)
(h) DDR Input High Voltage
SMVREF
—
(DDR) + 0.15
(h) DDR Input Low Voltage
—
—
VIH(AC) (DDR)
(h) DDR Input High Voltage
SMVREF
—
(DDR) + 0.31
VOL (DDR)
(h, i) DDR Output Low Voltage
—
—
VOH (DDR)
(h, i) DDR Output High Voltage
2.1
—
ILeak (DDR)
(h) Input Leakage Current
—
—
CI/O (DDR)
(h, i) DDR Input/Output Pin
Capacitance
3.0
—
DDR2 Interface (Intel® 82915G/82915GV GMCH and 82915P MCH only)
VIL(DC) (DDR2)
(k) DDR2 Input Low Voltage
—
—
VIH(DC) (DDR2)
(k) DDR2 Input High Voltage
SMVREF
—
(DDR2) +
0.125
VIL(AC) (DDR2)
(k) DDR2 Input Low Voltage
—
—
VIH(AC) (DDR2)
(k) DDR2 Input High Voltage
SMVREF
—
(DDR2) +
0.250
VOL (DDR2)
(k, l) DDR2 Output Low Voltage
—
—
VOH (DDR2)
(k, l) DDR2 Output High Voltage
1.5
—
ILeak (DDR2)
(k) Input Leakage Current
—
—
CI/O (DDR2)
(k, l) DDR2 Input/Output Pin
Capacitance
3.0
—
Max
Unit
Notes
(0.25 x
V
VTT)+0.1
VTT
V
VTTmax /
(1-0.25)Rttmin
20
mA Rttmin = 54Ω
µA VOL<Vpad<Vtt
3.5
pF
2.5
pF
SMVREF
V
(DDR) – 0.15
—
V
SMVREF
V
(DDR) – 0.31
—
V
0.4
V
1
V
1
±10
µA
6.0
pF
SMVREF
V
(DDR2) –
0.125
—
V
SMVREF
V
(DDR2) –
0.250
—
V
0.3
V
1
V
1
±10
uA
6.0
pF
Datasheet
263