MC68HC08AZ32A Datasheet, PDF (296/312 Pages) Motorola, Inc – HCMOS Microcontroller Unit

Electrical Specifications
20.12 RAM Memory Characteristics
Characteristic
RAM data retention voltage
Symbol
Min
V_RDR
0.7
Max
—
Unit
V
20.13 EEPROM Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
EEPROM programming time per byte
EEPROM erasing time per byte
EEPROM erasing time per block
EEPROM erasing time per bulk
EEPROM programming voltage discharge period
Number of programming operations to the same
EEPROM byte before erase⁽¹⁾
t_EEPGM
10
—
—
ms
t_EEBYTE
10
—
—
ms
t_EEBLOCK
10
—
—
ms
t_EEBULK
10
—
—
ms
t_EEFPV
100
—
—
µs
—
—
—
8
—
EEPROM programming maximum time to AUTO bit set
—
—
—
500
µs
EEPROM erasing maximum time to AUTO bit set
—
—
—
8
ms
EEPROM endurance⁽²⁾
—
10K
>100K
—
Cycles
EEPROM data retention⁽³⁾
—
15
>100
—
Years
1. Programming a byte more times than the specified maximum may affect the data integrity of that byte. The byte must be
erased before it can be programmed again.
2. Typical endurance was evaluated for this product family. For additional information on how Freescale defines Typical En-
durance, please refer to Engineering Bulletin EB619.
3. Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25°C using the Arrhenius equation. For additional information on how Freescale defines Typical Data Retention, please
refer to Engineering Bulletin EB618.
MC68HC08AZ32A Data Sheet, Rev. 2
296
Freescale Semiconductor